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SFF9240 参数 Datasheet PDF下载

SFF9240图片预览
型号: SFF9240
PDF下载: 下载PDF文件 查看货源
内容描述: 先进的功率MOSFET [Advanced Power MOSFET]
分类和应用: 晶体晶体管脉冲局域网
文件页数/大小: 7 页 / 209 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
 浏览型号SFF9240的Datasheet PDF文件第1页浏览型号SFF9240的Datasheet PDF文件第3页浏览型号SFF9240的Datasheet PDF文件第4页浏览型号SFF9240的Datasheet PDF文件第5页浏览型号SFF9240的Datasheet PDF文件第6页浏览型号SFF9240的Datasheet PDF文件第7页  
P-CHANNEL  
POWER MOSFET  
SFF9240  
Electrical Characteristics (TC=25oC unless otherwise specified)  
Symbol  
BVDSS  
Characteristic  
Min. Typ. Max. Units  
Test Condition  
V
GS=0V,ID=-250µA  
Drain-Source Breakdown Voltage  
Breakdown Voltage Temp. Coeff.  
Gate Threshold Voltage  
V
V/oC  
V
-200 --  
-- -0.16 --  
-2.0 -- -4.0  
-- -100  
--  
BV/TJ  
VGS(th)  
ID=-250µA  
See Fig 7  
V
V
V
DS=-5V,ID=-250µA  
GS=-30V  
GS=30V  
Gate-Source Leakage , Forward  
Gate-Source Leakage , Reverse  
--  
--  
--  
--  
IGSS  
nA  
--  
--  
100  
-10  
VDS=-200V  
DS=-160V,TC=125oC  
IDSS  
Drain-to-Source Leakage Current  
µA  
V
-- -100  
Static Drain-Source  
On-State Resistance  
Forward Transconductance  
Input Capacitance  
4
RDS(on)  
VGS=-10V,ID=-3.8A  
VDS=-40V,ID=-3.8A  
--  
--  
0.5  
O
4
gfs  
Ciss  
Coss  
Crss  
td(on)  
tr  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
5.3  
--  
S
O
1220 1585  
VGS=0V,VDS=-25V,f =1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Rise Time  
310  
120  
40  
55  
115  
50  
59  
--  
207  
81  
pF  
See Fig 5  
16  
VDD=-100V,ID=-11A,  
23  
RG=9.1Ω  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
54  
4
5
See Fig 13  
O O  
19  
Qg  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain(“ Miller”) Charge  
46  
VDS=-160V,VGS=-10V,  
Qgs  
Qgd  
nC  
9.2  
22.9  
ID=-11A  
4
5
--  
See Fig 6 & Fig 12  
OO  
Source-Drain Diode Ratings and Characteristics  
Symbol  
IS  
Characteristic  
Continuous Source Current  
Pulsed-Source Current  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
Min. Typ. Max. Units  
Test Condition  
Integral reverse pn-diode  
in the MOSFET  
TJ=25oC,IS=-7.6A,VGS=0V  
TJ=25oC,IF=-11A  
--  
--  
--  
-- -7.6  
-- -30  
-- -5.0  
A
ISM  
1
O
4
VSD  
trr  
V
O
ns  
µC  
-- 180 --  
-- 1.24 --  
Qrr  
4
diF/dt=100A/µs  
O
Notes ;  
1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature  
O
L=20mH, IAS=-7.6A, VDD=-50V, RG=27*, Starting TJ =25oC  
2
O
ISD -11A, di/dt 450A/µs, V  
BVDSS , Starting TJ =25oC  
_
_
_
3
<
<
O
DD  
<
_
4
2%  
O Pulse Test : Pulse Width = 250µs, Duty Cycle  
<
Essentially Independent of Operating Temperature  
5
O