P-CHANNEL
POWER MOSFET
SFF9240
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
BVDSS
Characteristic
Min. Typ. Max. Units
Test Condition
V
GS=0V,ID=-250µA
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
V
V/oC
V
-200 --
-- -0.16 --
-2.0 -- -4.0
-- -100
--
∆BV/∆TJ
VGS(th)
ID=-250µA
See Fig 7
V
V
V
DS=-5V,ID=-250µA
GS=-30V
GS=30V
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
--
--
--
--
IGSS
nA
--
--
100
-10
VDS=-200V
DS=-160V,TC=125oC
IDSS
Drain-to-Source Leakage Current
µA
V
-- -100
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
4
RDS(on)
VGS=-10V,ID=-3.8A
VDS=-40V,ID=-3.8A
--
--
Ω
0.5
O
4
gfs
Ciss
Coss
Crss
td(on)
tr
--
--
--
--
--
--
--
--
--
--
--
5.3
--
S
O
1220 1585
VGS=0V,VDS=-25V,f =1MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
310
120
40
55
115
50
59
--
207
81
pF
See Fig 5
16
VDD=-100V,ID=-11A,
23
RG=9.1Ω
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
54
4
5
See Fig 13
O O
19
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain(“ Miller”) Charge
46
VDS=-160V,VGS=-10V,
Qgs
Qgd
nC
9.2
22.9
ID=-11A
4
5
--
See Fig 6 & Fig 12
OO
Source-Drain Diode Ratings and Characteristics
Symbol
IS
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
Integral reverse pn-diode
in the MOSFET
TJ=25oC,IS=-7.6A,VGS=0V
TJ=25oC,IF=-11A
--
--
--
-- -7.6
-- -30
-- -5.0
A
ISM
1
O
4
VSD
trr
V
O
ns
µC
-- 180 --
-- 1.24 --
Qrr
4
diF/dt=100A/µs
O
Notes ;
1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O
L=20mH, IAS=-7.6A, VDD=-50V, RG=27Ω*, Starting TJ =25oC
2
O
ISD -11A, di/dt 450A/µs, V
BVDSS , Starting TJ =25oC
_
_
_
3
<
<
O
DD
<
_
4
2%
O Pulse Test : Pulse Width = 250µs, Duty Cycle
<
Essentially Independent of Operating Temperature
5
O
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
