SFF9240
Advanced Power MOSFET
FEATURES
BVDSS = -200 V
RDS(on) = 0.5 Ω
ID = -7.6 A
! Avalanche Rugged Technology
! Rugged Gate Oxide Technology
! Lower Input Capacitance
! Improved Gate Charge
! Extended Safe Operating Area
! Lower Leakage Current : 10 µA (Max.) @ VDS = -200V
! Lower RDS(ON) : 0.344 Ω (Typ.)
TO-3PF
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
Characteristic
Value
-200
-7.6
Units
VDSS
Drain-to-Source Voltage
V
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
ID
A
-5.3
1
IDM
VGS
EAS
IAR
30
A
V
O
+
_
Gate-to-Source Voltage
30
2
Single Pulsed Avalanche Energy
Avalanche Current
770
-7.6
6.0
mJ
A
O
1
O
1
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25oC)
Linear Derating Factor
mJ
V/ns
W
O
3
-5.0
60
O
PD
TJ , TSTG
TL
0.48
W/oC
Operating Junction and
- 55 to +150
300
Storage Temperature Range
Maximum Lead Temp. for Soldering
oC
Purposes, 1/8 ” from case for 5-seconds
Thermal Resistance
Symbol
Characteristic
Typ.
Max.
Units
RθJC
Junction-to-Case
--
--
2.08
40
oC/W
RθJA
Junction-to-Ambient
Rev. A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
