MMBT3906SL — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. DC Current Gain
T
J
=125 C
o
T
J
=75 C
o
o
Figure 2. Collector-Emitter Saturation Voltage
1000
Vce=1V
Ic=10*Ib
T
J
=25 C
Current Gain
100
T
J
=-25 C
o
Collector-Emitter Voltage,[mV]
T
J
=125 C
T
J
=75 C
o
o
100
T
J
=25 C
T
J
=-25 C
o
o
10
1
10
100
10
100
Collector Current, [mA]
Collector Current, [mA]
Figure 3. Base- Emitter Saturation Voltage
Ic=10*Ib
T
J
=25 C
1000
o
Figure 4. Collector- Base Leakage Current
100
T
J
=-25 C
o
Base-Collector Leakage Current,[nA]
Base- Emitter Voltage,[mV]
T
J
=75 C
T
J
=125 C
o
o
T
J
=125 C
10
o
T
J
=75 C
T
J
=25 C
1
10
20
30
o
o
T
J
=-25 C
40
o
100
10
100
Collector Current, [mA]
Base-Collector Revere Voltage, [V]
Figure 5. Collector- Base Capacitance
Base- Collector Juntion Capacitance, C
ob
[pF]
12
300
Figure 6. Power Derating
f=1mhz
250
Power Dissipation, [mW]
11
200
9
150
8
100
6
50
0
0
5
10
0
25
50
75
100
o
125
150
Base- Collector Reverse Voltage, V
cb
[V]
Ambient Temperature, T
a
[ C]
© 2012 Fairchild Semiconductor Corporation
MMBT3906SL Rev. 1.1.0
3
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
