MMBT3906SL — PNP Epitaxial Silicon Transistor
Electrical Characteristics*
T
a
= 25C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Test Condition
Min.
-40
40
-5
Max.
Unit
V
V
V
nA
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
C
ib
t
d
t
r
t
s
t
f
I
C
= -10A, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -10A, I
C
= 0
V
CE
= -30V, V
EB(OFF)
= -0.3V
V
CE
= 1V, I
C
= -0.1mA
V
CE
= 1V, I
C
= -1mA
V
CE
= 1V, I
C
= -10mA
V
CE
= 1V, I
C
= -50mA
V
CE
= 1V, I
C
= -100mA
Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
Base-Emitter Saturation Voltage
I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
Current Gain Bandwidth Product
V
CE
= -20V, I
C
= -10mA,
f = 100MHz
Output Capacitance
V
CB
= -5V, I
E
= 0, f = 1MHz
Input Capacitance
V
EB
= -0.5V, I
C
= 0, f = 1MHz
Delay Time
V
CC
= -3V, I
C
= -10mA
I
B1
= - I
B2
= -1mA
Rise Time
Storage Time
Fall Time
-50
60
80
100
60
30
300
-0.65
250
-0.25
-0.4
-0.85
-0.95
V
V
V
V
MHz
pF
pF
ns
ns
ns
ns
7.0
15
35
35
225
75
* DC Item are tested by Pulse Test: Pulse Width300us, Duty Cycle2%
© 2012 Fairchild Semiconductor Corporation
MMBT3906SL Rev. 1.1.0
2
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
