MMBT3906SL — PNP Epitaxial Silicon Transistor
August 2012
MMBT3906SL
PNP Epitaxial Silicon Transistor
Features
•
•
•
•
•
•
General purpose amplifier transistor
Ultra small surface mount package for all types (max 0.43mm tall)
Suitable for general switching & amplification
Well suited for portable application
As complementary type, NPN MMBT3904SL is recommended.
Pb free
COLLECTOR
3
C
E
B
1
BASE
SOT-923F
Marking : AB
2
EMITTER
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
J
T
STG
T
a
= 25°C unless otherwise noted
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature Range
Value
-40
-40
-5
200
150
-55 ~ 150
Unit
V
V
V
mA
C
C
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics*
T
a
= 25C unless otherwise noted
Symbol
P
C
R
JA
Parameter
Collector Power Dissipation, by R
JA
Thermal Resistance, Junction to Ambient
Max
227
550
Unit
mW
C/W
* Minimum land pad.
© 2012 Fairchild Semiconductor Corporation
MMBT3906SL Rev. 1.1.0
1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
