IRF640A
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
N-CHANNEL
POWER MOSFET
Fig 8. On-Resistance vs. Temperature
R
DS(on)
, (Normalized)
Drain-Source On-Resistance
3.0
Fig 7. Breakdown Voltage vs. Temperature
1.2
2.5
1.1
2.0
1.0
1.5
1.0
@ Notes :
1. V = 10 V
GS
2. I = 9.0 A
D
0.9
@ Notes :
1. V = 0 V
GS
2. I = 250
µ
A
D
0.5
0.8
-75
-50
-25
0
25
50
75
100
o
125
150
175
0.0
-75
-50
-25
0
25
50
75
100
o
125
150
175
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Fig 9. Max. Safe Operating Area
[A]
Operation in This Area
is Limited by R
DS(on)
100
µ
s
1 ms
1
10
Fig 10. Max. Drain Current vs. Case Temperature
20
I
D
, Drain Current
I
D
, Drain Current
2
10
[A]
15
10 ms
10
5
10
2
0
25
DC
0
10
@ Notes :
1. T = 25
o
C
C
2. T = 150
o
C
J
3. Single Pulse
10
-1
0
10
1
10
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
c
, Case Temperature [
o
C]
Fig 11. Thermal Response
Thermal Response
10
0
D=0.5
0.2
10
- 1
0.1
0.05
0.02
0.01
single pulse
10
- 2
10
- 5
10
- 4
10
- 3
10
- 2
@ Notes :
1. Z
θ
J C
(t)=0.9
o
C/W Max.
(t)
2. Duty Factor, D=t /t
2
1
3. T
J M
-T
C
=P
D M
*Z
θ
JC
Z
JC
(t) ,
P
DM
t
1
t
2
10
- 1
10
0
10
1
θ
t
1
, Square Wave Pulse Duration
[sec]
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
