IRF640A
Symbol
BV
DSS
∆
BV/
∆
T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Characteristic
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Min. Typ. Max. Units
200
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.26
--
--
--
--
--
--
9.61
210
94
17
16
48
24
44
10.4
27.1
--
--
4.0
100
-100
10
100
0.18
--
250
110
40
40
110
60
58
--
--
nC
ns
µ
A
Ω
Ω
pF
V
V
nA
N-CHANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25
o
C unless otherwise specified)
Test Condition
V
GS
=0V,I
D
=250
µ
A
See Fig 7
V
DS
=5V,I
D
=250
µ
A
V
GS
=30V
V
GS
=-30V
V
DS
=200V
V
DS
=160V,T
C
=125 C
V
GS
=10V,I
D
=9A
V
DS
=40V,I
D
=9A
4
O
4
O
o
o
V/ C I
D
=250
µ
A
1160 1500
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
V
DD
=100V,I
D
=18A,
R
G
=9.1
Ω
See Fig 13
V
DS
=160V,V
GS
=10V,
I
D
=18A
See Fig 6 & Fig 12
4
5
OO
4
5
OO
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
1
O
4
O
Min. Typ. Max. Units
--
--
--
--
--
--
--
--
195
1.35
18
72
1.5
--
--
A
V
ns
µ
C
Test Condition
Integral reverse pn-diode
in the MOSFET
T
J
=25
o
C,I
S
=18A,V
GS
=0V
T
J
=25
o
C ,I
F
=18A
di
F
/dt=100A/
µ
s
4
O
Notes ;
1
O
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
2
O
L=1mH, I
AS
=18A, V
DD
=50V, R
G
=27
Ω
, Starting T
J
=25
o
C
3
<
_
_
O
I
SD
<
18A, di/dt
_
260A/
µ
s, V
DD
<
BV
DSS
, Starting T
J
=25
o
C
_
4
Pulse Test : Pulse Width = 250
µ
s, Duty Cycle
<
2%
O
5
O
Essentially Independent of Operating Temperature
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
