N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
V
GS
IRF640A
Fig 2. Transfer Characteristics
[A]
I
D
, Drain Current
10
1
I
D
, Drain Current
[A]
Top :
10
1
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
150
o
C
10
0
25
o
C
@ Notes :
1. V = 0 V
GS
2. V = 40 V
DS
- 55
o
C
3. 250
µ
s Pulse Test
6
8
10
10
0
10
-1
10
-1
@ Notes :
1. 250
µ
s Pulse Test
2. T = 25
o
C
C
10
0
10
1
10
-1
2
4
V
DS
, Drain-Source Voltage [V]
[A]
V
GS
, Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
R
DS(on)
, [ ]
Ω
Drain-Source On-Resistance
04
.
Fig 4. Source-Drain Diode Forward Voltage
03
.
V
GS
= 10 V
I
DR
, Reverse Drain Current
1
1
0
02
.
1
0
0
@Nts:
oe
1 V
GS
= 0 V
.
2
o
C
5
1
-1
0
02
.
04
.
06
.
08
.
10
.
12
.
2 2 0
µ
s P l e T s
. 5
us et
14
.
16
.
18
.
20
.
01
.
V
GS
= 20 V
@ N t : T
J
= 2
o
C
oe
5
00
.
0
20
40
60
8
0
10 C
5
o
I
D
, Drain Current [A]
V
SD
, Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
20
00
C
iss
= C
gs
+ C ( C
ds
= s o t d )
hre
gd
C
oss
= C
ds
+ C
gd
Fig 6. Gate Charge vs. Gate-Source Voltage
[V]
V
DS
= 4 V
0
0
V
DS
= 1 0 V
V
DS
= 1 0 V
6
[pF]
10
50
C
iss
10
00
C
oss
50
0
@Nts:
oe
1 V
GS
= 0 V
.
2 f=1Mz
.
H
C
rss
V
GS
, Gate-Source Voltage
C
rss
= C
gd
1
0
Capacitance
5
@ N t s : I
D
= 1 . A
oe
80
0
0
1
0
2
0
3
0
4
0
5
0
0
0
1
0
1
10
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
