HUF75345G3, HUF75345P3, HUF75345S3S
Typical Performance Curves (Continued)
2000
1000
o
T
= 25 C
FOR TEMPERATURES
ABOVE 25 C DERATE PEAK
C
o
CURRENT AS FOLLOWS:
175 - T
150
C
I = I
25
V
= 20V
GS
V
= 10V
GS
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
100
50
-5
-4
-3
-2
10
-1
0
1
10
10
10
10
10
10
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
1000
1000
If R = 0
T
T
= MAX RATED
J
t
= (L)(I )/(1.3*RATED BV
- V
)
AV
If R ≠ 0
= (L/R)ln[(I *R)/(1.3*RATED BV
AS
DSS
DD
o
= 25 C
C
t
- V ) +1]
DD
AV
AS
DSS
100µs
100
100
o
STARTING T = 25 C
J
1ms
10
1
OPERATION IN THIS
AREA MAY BE
10ms
o
STARTING T = 150 C
J
LIMITED BY r
DS(ON)
V
= 55V
DSS(MAX)
10
0.01
0.1
1
10
, TIME IN AVALANCHE (ms)
AV
100
1
10
, DRAIN TO SOURCE VOLTAGE (V)
100
200
t
V
DS
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
150
120
150
PULSE DURATION = 80µs
V
V
V
= 20V
= 10V
= 7V
GS
GS
DUTY CYCLE = 0.5% MAX
120
V
= 5V
GS
GS
V
= 6V
GS
90
90
60
60
30
o
25 C
30
PULSE DURATION = 80µs
o
175 C
DUTY CYCLE = 0.5% MAX
o
o
-55 C
T
= 25 C
V
= 15V
C
DD
6.0
, GATE TO SOURCE VOLTAGE (V)
0
0
0
1
2
3
4
0
1.5
3.0
4.5
7.5
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
V
GS
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
©2005 Fairchild Semiconductor Corporation
HUF75345G3, HUF75345P3, HUF75345S3S Rev. B1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
