HUF75345G3, HUF75345P3, HUF75345S3S
o
Electrical Specifications
T
= 25 C, Unless Otherwise Specified (Continued)
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
V
= 25V, V
= 0V,
-
-
-
4000
1450
450
-
-
-
pF
pF
pF
ISS
DS GS
f = 1MHz
(Figure 12)
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
C
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
1.25
55
UNITS
V
V
I
I
I
= 75A
-
-
-
-
-
-
SD
SD
SD
SD
t
= 75A, dI /dt = 100A/µs
SD
ns
rr
Reverse Recovered Charge
Q
= 75A, dI /dt = 100A/µs
80
nC
RR
SD
Typical Performance Curves
1.2
1.0
0.8
80
60
40
20
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
o
150
175
o
T
, CASE TEMPERATURE ( C)
T , CASE TEMPERATURE ( C)
C
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
θJC C
SINGLE PULSE
J
DM
θJC
0.01
-5
-4
-3
-2
-1
10
0
1
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
10
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2005 Fairchild Semiconductor Corporation
HUF75345G3, HUF75345P3, HUF75345S3S Rev. B1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
