HUF75345G3, HUF75345P3, HUF75345S3S
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
55
55
V
V
V
DSS
Drain to Gate Voltage (R
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
GS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
75
A
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Figure 4
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Figure 6
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
325
2.17
W
D
o
o
Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
W/ C
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
J
-55 to 175
C
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
o
300
260
C
C
L
o
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 150 C.
J
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
I
= 250µA, V
= 0V (Figure 11)
55
-
-
-
-
-
-
V
DSS
D
GS
GS
GS
I
V
V
V
= 50V, V
= 45V, V
= ±20V
= 0V
= 0V, T = 150 C
1
µA
µA
nA
DSS
DS
DS
GS
o
-
250
±100
C
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
I
-
GSS
V
V
= V , I = 250µA (Figure 10)
2
-
-
4
V
GS(TH)
GS
DS
D
r
I
= 75A, V
= 10V (Figure 9)
0.006
0.007
W
DS(ON)
D
GS
o
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
R
(Figure 3)
TO-247
-
-
-
-
-
-
0.46
30
C/W
θJC
o
C/W
θJA
o
TO-220, TO-263
62
C/W
SWITCHING SPECIFICATIONS (V
Turn-On Time
= 10V)
GS
t
V
R
R
= 30V, I
75A,
= 10V,
-
-
-
-
-
-
-
14
118
42
26
-
195
ns
ns
ns
ns
ns
ns
ON
DD
D
= 0.4Ω, V
L
GS
Turn-On Delay Time
Rise Time
t
-
-
d(ON)
= 2.5Ω
GS
t
r
Turn-Off Delay Time
Fall Time
t
-
d(OFF)
t
-
f
Turn-Off Time
t
98
OFF
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
V
V
V
= 0V to 20V
= 0V to 10V
= 0V to 2V
V
DD
= 30V,
75A,
-
-
-
-
-
220
125
6.8
14
275
165
10
-
nC
nC
nC
nC
nC
g(TOT)
GS
GS
GS
I
D
Gate Charge at 10V
Q
g(10)
R
= 0.4Ω
L
Threshold Gate Charge
Q
g(TH)
I
= 1.0mA
g(REF)
(Figure 13)
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Q
Q
gs
58
-
gd
©2005 Fairchild Semiconductor Corporation
HUF75345G3, HUF75345P3, HUF75345S3S Rev. B1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
