PRELIMINARY DATASHEET
Conditions
Electrical Characteristics
TJ = 25°C unless otherwise specified.
Symbol
Parameter
Min. Typ. Max.
Unit
SenseFET Section
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero-Gate-Voltage Drain Current
700
V
V
CC = 0V, ID = 100μA
VDS = 700V
100
μA
28
42
32
48
TJ = 25°C, ID = 180mA
TJ = 100°C, ID = 180mA
VGS = 11V
RDS(ON)
Drain-Source On-State Resistance
CISS
COSS
tr
Input Capacitance(7)
Output Capacitance(7)
Rise Time(7)
96
pF
pF
ns
ns
VDS = 40V
28
VDS = 350V, ID = 25mA
VDS = 350V, lD = 25mA
100
50
tf
Fall Time(7)
Control Section
fS
Initial Switching Frequency
VCC = 11V, VFB = 0.5V
- 25°C < TJ < 125°C
VCC = 11V, VFB = 0V
87.7
93.5
±5
100
±8
kHz
%
Switching Frequency Variation(7)
ΔfS
IFB
Feedback Source Current
200
7.2
225
250
μA
VCC = 11V, VFB = 1V,
Vsync oscillation
tB
Switching Blanking Time
7.7
8.2
3.2
μs
μs
Quasi-Resonant-Detection-Window
Time
VCC = 11V, VFB = 1V,
Vsync oscillation
tW
2.8
54
3.0
60
DMAX
DMIN
Maximum Duty Ratio
Minimum Duty Ratio
VCC = 11V, VFB = 3V
VCC = 11V, VFB = 0V
VFB = 0V, VCC sweep
After Turn-on, VFB = 0V
VSTR = 40V, VCC sweep
66
0
%
%
V
VSTART
VSTOP
tS/S
8.0
6.0
3
8.7
6.7
5
9.4
7.4
7
UVLO Threshold Voltage
V
Internal Soft-Start Time
ms
Burst-Mode Section
VBURH
0.75
0.65
0.85
0.75
100
0.95
0.85
V
V
Burst-Mode Voltage
V
CC = 11V, VFB sweep
VBURL
Hys.
mV
Protection Section
ILIM
Peak Current Limit
di/dt = 150mA/µs
280
4.0
320
4.5
360
5.0
mA
V
V
DS = 40V, VCC = 11V,
VSD
Shutdown Feedback Voltage
VFB sweep
IDELAY
tLEB
Shutdown Delay Current
VCC = 11V, VFB = 5V
4
5
6
μA
ns
V
Leading Edge Blanking Time(7)
Over-Current Latch Voltage(7)
-
-
360
0.8
140
60
-
-
VOCP
TSD
130
150
°C
°C
Thermal Shutdown Temperature(7)
Hys.
Sync Section
VSH
VCC = 11V, VFB = 1V
VCC = 11V, VFB = 1V
0.55
0.05
180
0.7
0.1
0.85
0.15
220
V
V
Sync Threshold Voltage
VSL
tSync
Sync Delay Time
200
ns
Total Device Section
Operating Supply Current (Control
Part Only)
IOP
V
CC = 11V, VFB = 3V
500
1
900
1.2
μA
mA
V
ICH
Start-up Charging Current
VCC = VFB = 0V, VSTR = 40V
VCC = VFB = 0V,
VSTR
Notes:
Supply Voltage
50
700
VSTR sweep
7. These parameters, although guaranteed, are not 100% tested in production
© 2006 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FSQ510, FSQ510H Rev. 0.0.3
5
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
