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FSBB20CH60 参数 Datasheet PDF下载

FSBB20CH60图片预览
型号: FSBB20CH60
PDF下载: 下载PDF文件 查看货源
内容描述: 智能功率模块 [Smart Power Module]
分类和应用:
文件页数/大小: 16 页 / 544 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
 浏览型号FSBB20CH60的Datasheet PDF文件第7页浏览型号FSBB20CH60的Datasheet PDF文件第8页浏览型号FSBB20CH60的Datasheet PDF文件第9页浏览型号FSBB20CH60的Datasheet PDF文件第10页浏览型号FSBB20CH60的Datasheet PDF文件第12页浏览型号FSBB20CH60的Datasheet PDF文件第13页浏览型号FSBB20CH60的Datasheet PDF文件第14页浏览型号FSBB20CH60的Datasheet PDF文件第15页  
5V-Line  
RPF  
4.7kΩ  
=
SPM  
,
,
IN(UH) IN(VH)  
IN(WH)  
IN(WL)  
,
,
IN(UL) IN(VL)  
CPU  
100 Ω  
VFO  
CPF  
1nF  
=
1nF  
COM  
Note:  
1. RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s  
printed circuit board. The SPM input signal section integrates 3.3k(typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the sig-  
nal voltage drop at input terminal.  
2. The logic input is compatible with standard CMOS or LSTTL outputs.  
Figure 9. Recommended CPU I/O Interface Circuit  
These Values depend on PWM Control Algorithm  
15V-Line  
RE(H)  
RBS  
DBS  
One-Leg Diagram of SPM  
P
Vcc VB  
IN  
HO  
0.1uF  
22uF  
COM VS  
Inverter  
Output  
Vcc  
IN  
OUT  
VSL  
1000uF  
1uF  
COM  
N
Note:  
1. It would be recommended that the bootstrap diode, D , has soft and fast recovery characteristics.  
BS  
2. The bootstrap resistor (R ) should be 3 times greater than R  
BS  
. The recommended value of R  
is 5.6, but it can be increased up to 20(maximum) for a slower dv/dt of  
E(H)  
E(H)  
high-side.  
3. The ceramic capacitor placed between V -COM should be over 1µF and mounted as close to the pins of the SPM as possible.  
Figure 10.CCRecommended Bootstrap Operation Circuit and Parameters  
11  
www.fairchildsemi.com  
FSBB20CH60 Rev. C  
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