FDS9933A
Typical Characteristics
5
(continued)
2000
I
D
= -3 .8 A
-V
G S
, GATE -SOU R C E V OLTAG E (V )
4
V
D S
= -5 V
C AP AC I TA NC E (pF)
-10 V
-15 V
1000
3
500
Ciss
2
200
Coss
f = 1 M Hz
V
G S
= 0 V
0.2
0.5
1
2
5
1
100
Crss
10
20
0
0
2
4
6
8
10
Q
g
, GA TE C H AR GE (nC )
50
0.1
-V
DS
, D R A IN T O S OU R CE V OLTA GE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
50
M
) LI
IT
100
N
S( O
30
us
25
20
PO W E R (W )
15
10
5
0
0. 01
10
- I
D
, D R AI N C U R R EN T (A)
RD
1m
10 m
s
3
100
s
SING LE PUL SE
R
θ
J A
=13 5° C/W
T
A
= 2 5°C
ms
0 .5
0. 05
V
G S
= -4.5V
SING L E PUL S E
R
θ
J A
= 135 °C/ W
A
T
A
= 2 5°C
0 .3
1
2
1s
10 s
DC
0. 01
0 .1
5
10
30
0. 1
0. 5
10
50 1 00
3 00
- V
D S
, DR A IN -SO UR C E V OLTA GE (V)
S IN GL E P UL S E TI ME (S EC )
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
T RANSIENT THERMAL RESISTANCE
0.5
0.2
0.1
0.05
0.02
0.01
0
.005
0
.002
0
.001
0. 001
0
0
.001
0.01
0.1
t
1
, TIME (s ec)
1
D = 0 .5
0 .2
0 .1
0 5
.0
P(p k)
0 2
.0
0 1
.0
S in g le P ul s e
r (t , NO RMAL IZED EFF T
)
EC IVE
R
θ
JA
( t) = r( ) * R
θ
JA
t
R
θ
JA
=
135°C/W
t
1
t
2
T
J
- T
A
= P * R
θ
JA (t)
D u t y C y c l e, D = t
1
/t
10
100
2
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDS9933A Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
