FDS9933A
DMOS Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
∆Β
V
DSS
∆
T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
(Note 2)
V
GS
= 0 V, I
D
= -250
µ
A
I
D
= -250
µ
A, Referenced to 25
°
C
V
DS
= -16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
-20
-16
-1
100
-100
V
mV/
°
C
µ
A
nA
nA
On Characteristics
V
GS(th)
∆
V
GS(th)
∆
T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= -250
µ
A
I
D
= -250
µ
A, Referenced to 25
°
C
V
GS
= -4.5 V, I
D
= -3.8 A
V
GS
= -4.5 V, I
D
= -3.8 A, T
J
= 125
°
C
V
GS
= -2.5 V, I
D
= -3.3 A
V
GS
= -4.5 V, V
DS
= -5.0 V
V
DS
= -4.5 V, I
D
= -3.8 A
-0.4
-0.8
2.5
0.058
0.086
0.084
-1.5
V
mV/
°
C
0.075
0.12
0.105
I
D(on)
g
FS
-10
10
Ω
Ω
Ω
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= -10 V, V
GS
= 0 V, f = 1.0 MHz
600
175
80
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= -5 V, I
D
= -0.5 A,
V
GS
= -4.5 V, R
GEN
= 6.0
Ω
6
9
31
28
12
18
50
42
10
ns
ns
ns
ns
nC
nC
nC
V
DS
= -10 V, I
D
= -3.8 A,
V
GS
= -4.5 V
7
1.3
2
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= -1.3 A
(Note 2)
-1.3
-0.75
-1.2
A
V
Notes:
1:
R
θJA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θJA
is determined by the user's board design.
a) 78° C/W when
mounted on a 0.5 in
2
pad of 2 oz. copper.
b) 125° C/W when
mounted on a 0.02 in
2
pad of 2 oz. copper.
c) 135° C/W when
mounted on a 0.003 in
2
pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2:
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FDS9933A Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
