Typical Characteristics (continued)
0 . 12
0.1
20
V
= -4.5V
G S
-3. 5V
V
=
-2 . 0 V
-3.0V
GS
15
10
5
-2.5V
-2 . 5 V
-3 . 0 V
0 . 08
0 . 06
0 . 04
-3 . 5 V
-2.0V
-4 . 5 V
-1.5V
4
0
0
1
2
3
5
0
4
8
, DRA IN CURRENT (A)
D
1 2
1 6
2 0
- V
DS
, DRAI N-S OURCE VOLTA GE (V)
-
I
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1 .6
1 .4
1 .2
1
0.25
ID = -2.0A
ID
VGS
=
-3. 8A
-4.5V
=
0.2
0.15
T
=
125°C
25°C
J
0.1
0.05
0
0 .8
0 .6
1
2
3
4
5
-50
-25
0
25
50
75
100
125
150
- V , GATE TO SOURCE VOLTAGE (V)
GS
T
, JUNCT ION TEMPERATURE (° C)
J
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
Figure 3. On-Resistance Variation
withTemperature.
10
10
VDS = -5V
T = -55°C
J
V
= 0V
125° C
25°C
GS
8
6
4
2
0
1
0.1
T
= 125 °C
J
25 °C
-55 °C
0.01
0.001
0.0001
1
1.5
2
2.5
3
-V , GATE T O SOURCE V OLTA GE (V)
GS
0
0.2
-V
0.4
0.6
0.8
1
1.2
, BODY DIODE FORW ARD VOLT AGE (V )
SD
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS9933A Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
