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FDS8984_10 参数 Datasheet PDF下载

FDS8984_10图片预览
型号: FDS8984_10
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道PowerTrench MOSFET的 [N-Channel PowerTrench MOSFET]
分类和应用:
文件页数/大小: 6 页 / 441 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
 浏览型号FDS8984_10的Datasheet PDF文件第1页浏览型号FDS8984_10的Datasheet PDF文件第2页浏览型号FDS8984_10的Datasheet PDF文件第3页浏览型号FDS8984_10的Datasheet PDF文件第5页浏览型号FDS8984_10的Datasheet PDF文件第6页  
Typical Characteristics TJ = 25°C unless otherwise noted  
700  
600  
10  
CISS  
8
500  
f = 1MHz  
GS = 0V  
VDD = 15V  
V
VDD = 10V  
6
400  
300  
200  
100  
COSS  
4
2
0
VDD = 20V  
CRSS  
0
2
4
6
8
10  
0.1  
1
10  
30  
Qg, GATE CHARGE(nC)  
VDS, DRAIN TO SOURCE VOLTAGE (V)  
Figure 7. Gate Charge Characteristics  
Figure 8. Capacitance vs Drain to Source Voltage  
8
7
20  
10  
6
VGS=10V  
STARTING TJ = 25OC  
5
4
VGS=4.5V  
3
2
1
0
STARTING TJ = 125OC  
1
0.01  
25  
50  
75  
100  
125  
150  
0.1  
1
10 20  
TA, AMBIENT TEMPERATURE (oC)  
tAV, TIME IN AVALANCHE (mS)  
Figure 9. Unclamped Inductive Switching  
Capability  
Figure 10. Maximum Continuous Drain Current vs  
Ambient Temperature  
100  
3000  
o
T
= 25 C  
A
10us  
1000  
100  
10  
FOR TEMPERATURES  
o
100us  
ABOVE 25 C DERATE PEAK  
10  
1
CURRENT AS FOLLOWS:  
150 T  
A
I = I  
1ms  
25  
-----------------------  
125  
VGS=10V  
OPERATION IN THIS  
AREA MAY BE  
10ms  
100ms  
1s  
LIMITED BY r  
DS(on)  
0.1  
SINGLE PULSE  
DC  
TJ = MAX RATED  
SINGLE PULSE  
TA = 25oC  
0.01  
1
10-5 10-4 10-3 10-2 10-1 100 101 102 103  
t, PULSE WIDTH (s)  
0.1  
1
10  
100  
VDS, DRAIN TO SOURCE VOLTAGE (V)  
Figure 11. Forward Bias Safe Operating Area  
Figure 12. Single Pulse Maximum Power  
Dissipation  
FDS8984_F085 Rev. A  
4
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