FDS8984_F085 N-Channel PowerTrench
®
MOSFET
Fabruary
2010
FDS8984_F085
30V, 7A, 23mΩ
General Description
N-Channel PowerTrench MOSFET
Features
Max r
DS(on)
= 23mΩ, V
GS
= 10V, I
D
= 7A
Max r
DS(on)
= 30mΩ, V
GS
= 4.5V, I
D
= 6A
Low gate charge
100% R
G
tested
Qualified to AEC Q101
RoHS Compliant
®
tm
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
D1
D
D1
D
D
D2
D2
D
5
6
Q2
4
3
2
Q1
1
SO-8
Pin 1
SO-8
G1
S1
S
G2
S2
G
7
8
S
S
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous
Pulsed
Single Pulse Avalache Energy
Power Dissipation for Single Operation
Derate above 25°C
Operating and Storage Temperature
(Note 2)
(Note 1a)
Parameter
Ratings
30
±20
7
30
32
1.6
13
-55 to 150
Units
V
V
A
A
mJ
W
mW/°C
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS8984
Device
FDS8984_F085
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
©2010 Fairchild Semiconductor Corporation
FDS8984_F085 Rev. A
1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
