欢迎访问ic37.com |
会员登录 免费注册
发布采购

FDS8984_10 参数 Datasheet PDF下载

FDS8984_10图片预览
型号: FDS8984_10
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道PowerTrench MOSFET的 [N-Channel PowerTrench MOSFET]
分类和应用:
文件页数/大小: 6 页 / 441 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
 浏览型号FDS8984_10的Datasheet PDF文件第1页浏览型号FDS8984_10的Datasheet PDF文件第2页浏览型号FDS8984_10的Datasheet PDF文件第4页浏览型号FDS8984_10的Datasheet PDF文件第5页浏览型号FDS8984_10的Datasheet PDF文件第6页  
Typical Characteristics TJ = 25°C unless otherwise noted  
30  
20  
10  
0
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
VGS=10V PULSE DURATION =80µS  
PULSE DURATION =80µS  
DUTY CYCLE =0.5% MAX  
DUTY CYCLE =0.5% MAX  
VGS=5.0V  
VGS=3.5V  
VGS=3.0V  
VGS=4.5V  
VGS=4.0V  
VGS=3.5V  
VGS=4.5V  
VGS=4.0V  
VGS=3.0V  
VGS=10V  
25  
VGS=5.0V  
20  
0.0  
0.5  
VDS, DRAIN-SOURCE VOLTAGE (V)  
Figure 1. On Region Characteristics  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
5
10  
15  
30  
ID, DRAIN CURRENT (A)  
Figure 2. On-Resistance vs Drain Current and  
Gate Voltage  
60  
1.6  
ID = 7A  
GS = 10V  
PULSE DURATION = 80µs  
DUTY CYCLE = 0.5%MAX  
ID = 7A  
55  
50  
45  
40  
35  
30  
25  
20  
15  
V
1.4  
1.2  
1.0  
0.8  
0.6  
TJ = 125oC  
TJ = 25oC  
2
4
6
8
10  
-80  
-40  
0
40  
80  
120  
160  
VGS, GATE TO SOURCE VOLTAGE (V)  
TJ, JUNCTION TEMPERATURE (oC)  
Figure 3. On Resistance vs Temperature  
Figure 4. On-Resistance vs Gate to Source  
Votlage  
30  
30  
PULSE DURATION =80µS  
DUTY CYCLE =0.5% MAX  
VGS = 0V  
10  
25  
20  
15  
10  
5
VDD = 5V  
TJ = 150oC  
TJ = 150OC  
TJ = 25oC  
1
0.1  
TJ = -55oC  
TJ = 25OC  
0.01  
TJ = - 55OC  
1E-3  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1
2
3
4
VSD, BODY DIODE FORWARD VOLTAGE (V)  
VGS, GATE TO SOURCE VOLTAGE (V)  
Figure 5. Transfer Characteristics  
Figure 6. Source to Drain Diode Forward Voltage  
vs Source Current  
FDS8984_F085 Rev. A  
3
www.fairchildsemi.com