FDS8962C Dual N & P-Channel PowerTrench
®
MOSFET
Typical Characteristics: Q1 (N-Channel)
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 7A
V
DS
= 10V
20V
800
f = 1MHz
V
GS
= 0 V
8
15V
CAPACITANCE (pF)
600
C
iss
400
6
4
C
oss
200
2
C
rss
0
0
2
4
6
8
10
12
Q
g
, GATE CHARGE (nC)
0
0
5
10
15
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
R
DS(ON)
LIMIT
100µs
1ms
10ms
100ms
1s
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
R
θ
JA
= 135°C/W
T
A
= 25°C
I
D
, DRAIN CURRENT (A)
40
10
30
1
DC
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 135°C/W
T
A
= 25°C
10s
20
0.1
10
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
0
0.001
0.01
0.1
1
10
t
1
, TIME (sec)
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
FDS8962C Rev.
A1
5
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FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
