FDS8962C Dual N & P-Channel PowerTrench
®
MOSFET
Electrical Characteristics
T
A
= 25°C unless otherwise noted
(Continued)
Symbol
I
S
V
SD
t
rr
Q
rr
Parameter
Test Conditions
Type
Q1
Q2
Min
Typ
Max
1.3
-1.3
Units
A
V
nS
nC
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V, I
S
= 1.3 A
V
GS
= 0 V, I
S
= -1.3 A
(Note 2)
(Note 2)
Q1
Q2
Q1
Q2
Q1
Q2
0.75
-0.88
19
19
9
6
1.2
-1.2
Q1
I
F
= 7 A, d
iF
/d
t
= 100 A/µs
Q2
I
F
= -5 A, d
iF
/d
t
= 100 A/µs
Notes:
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 78°/W when mounted
on a 0.5 in
2
pad of 2 oz
copper
b) 125°/W when mounted
on a .02 in
2
pad of 2 oz
copper
c) 135°/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS8962C Rev.
A1
3
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