FDS8962C Dual N & P-Channel PowerTrench
®
MOSFET
June
2006
FDS8962C
Dual N & P-Channel PowerTrench
®
MOSFET
Features
■
Q1:
N-Channel
7.0A, 30V R
DS(on)
= 0.030
Ω
@ V
GS
= 10V
R
DS(on)
= 0.044
Ω
@ V
GS
= 4.5V
■
Q2:
P-Channel
-5A, -30V R
DS(on)
= 0.052
Ω
@ V
GS
= -10V
R
DS(on)
= 0.080
Ω
@ V
GS
= -4.5V
■
Fast switching speed
■
High power and handling capability in a widely used surface
mount package
General Description
These dual N- and P-Channel enhancement mode power field
effect transistors are produced using Fairchild Semiconductor’s
advanced PowerTrench process that has been especially
tailored to minimize on-state ressitance and yet maintain
superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
D1
D1
D2
D2
5
6
Q2
4
3
SO-8
Pin 1
S1
G1
G2
S2
7
8
Q1
2
1
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
R
θ
JA
R
θ
JC
Operating and Storage Junction Temperature Range
(Note 1a)
Parameter
Q1
30
±
20
7
20
2
1.6
1
0.9
-55 to +150
Q2
-30
±
20
-5
-20
Units
V
V
A
W
°
C
°
C/W
°
C/W
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
Package Marking and Ordering Information
Device Marking
FDS8962C
Device
FDS8962C
Reel Size
13”
Tape width
12mm
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDS8962C Rev.
A1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
