FDS8960C Dual N & P-Channel PowerTrench
®
MOSFET
Typical Characteristics: Q2 (P-Channel)
20
3.4
V
GS
= -10V
-4.5V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-6.0V
3.2
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
0.5
1
1.5
2
2.5
3
3.5
4
-I
D
, DRAIN CURRENT (A)
16
V
GS
= - 3.5V
12
-4.0V
-4.5V
-5.0V
-6.0V
-10V
8
-3.5V
4
-3.0V
0
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
5
10
-I
D
, DRAIN CURRENT (A)
15
20
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.2
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= -5A
V
GS
= - 10V
I
D
= -2.5A
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
T
A
= 125 C
o
T
A
= 25 C
o
Figure 13. On-Resistance Variation with
Temperature.
20
V
DS
= -5V
-I
D
, DRAIN CURRENT (A)
16
T
A
= -55 C
12
125 C
8
o
o
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
100
-I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
10
T
A
= 125 C
1
0.1
0.01
0.001
0.0001
25 C
-55 C
o
o
o
25 C
o
4
0
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS8960C Rev C(W)
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
