FDS8960C Dual N & P-Channel PowerTrench
®
MOSFET
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
I
GSSR
I
GSSF
T
A
= 25°C unless otherwise noted
Parameter
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage, Forward
Test Conditions
V
GS
= 0 V,
I
D
= 250
µA
V
GS
= 0 V,
I
D
= –250
µA
I
D
= 250
µA,
Referenced to 25°C
I
D
= –250 µA, Referenced to 25°C
V
DS
= 28 V,
V
GS
= 0 V
V
DS
= –28 V,
V
GS
= 0 V
V
GS
= 20 V,
V
DS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
Type Min Typ
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
35
–35
31
–40
Max
Units
V
mV/°C
Off Characteristics
1
–1
100
–100
100
–100
µA
nA
nA
nA
nA
Gate-Body Leakage, Reverse V
GS
= –20 V,
Gate-Body Leakage, Forward V
GS
= 25 V,
Gate-Body Leakage, Reverse V
GS
= –25 V,
(Note 2)
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
,
I
D
= 250
µA
V
DS
= V
GS
,
I
D
= –250 µA
I
D
= 250
µA,
Referenced to 25°C
I
D
= –250 µA, Referenced to 25°C
V
GS
= 10 V,
I
D
= 7 A
V
GS
= 4.5 V,
I
D
= 6 A
V
GS
= 10 V, I
D
= 7 A, T
J
= 125°C
V
GS
= –10 V,
I
D
= –5 A
V
GS
= –4.5 V,
I
D
= –4 A
V
GS
= –10 V, I
D
= –5 A, T
J
= 125°C
V
DS
= 5 V,
I
D
= 7 A
V
DS
= –5 V,
I
D
=–5 A
Q1
V
DS
= 15 V, V
GS
= 0 V, f = 1.0 MHz
Q1
Q2
Q1
Q2
Q1
1
–1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
2
–1.8
–5
4
20
25
29
44
70
61
23
9
570
540
126
113
52
60
2
6
3
–3
V
mV/°C
24
32
37
53
87
79
mΩ
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Q2
Reverse Transfer Capacitance V
DS
= –15 V, V
GS
= 0 V, f = 1.0 MHz
Gate Resistance
f = 1.0 MHz
pF
pF
pF
Ω
FDS8960C Rev C(W)
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
