FDS8960C Dual N & P-Channel PowerTrench
®
MOSFET
August 2005
FDS8960C
Dual N & P-Channel PowerTrench
®
MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
•
•
Features
•
Q1:
N-Channel
R
DS(on)
= 0.024Ω @ V
GS
= 10V
R
DS(on)
= 0.032Ω @ V
GS
= 4.5V
•
Q2:
P-Channel
R
DS(on)
= 0.053Ω @ V
GS
= –10V
R
DS(on)
= 0.087Ω @ V
GS
= –4.5V
Fast switching speed
RoHS compliant
7.0A, 35V
–5A, –35V
D1
D
D1
D
D
D2
D2
D
5
6
7
Q2
4
3
Q1
2
1
SO-8
Pin 1
SO-8
G2
S2
G
G1
S
S1
S
8
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
T
A
= 25°C unless otherwise noted
Parameter
Q1
35
(Note 1a)
Q2
–35
±25
–5
–20
2
1.6
1
0.9
–55 to +150
Units
V
V
A
W
- Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Drain Current
±20
7
20
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
°C/W
°C/W
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
Package Marking and Ordering Information
Device Marking
FDS8960C
Device
FDS8960C
Reel Size
13”
Tape width
12mm
Quantity
2500 units
©2005
Fairchild Semiconductor Corporation
FDS8960C Rev C(W)
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
