Typical Characteristics TJ = 25°C unless otherwise noted
103
10
V
DD
= 10V
C
iss
8
6
4
2
0
V
= 30V
DD
V
DD
= 20V
C
oss
102
C
rss
f = 1MHz
= 0V
V
GS
101
0.1
1
10
40
0
4
8
12
16
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
10
7
6
5
V
GS
= 10V
4
3
2
1
0
TJ = 25oC
1
V
= 4.5V
GS
TJ = 125oC
o
R
θJA
= 81 C/W
0.1
10-3
10-2
10-1
100
101
102
tAV, TIME IN AVALANCHE(ms)
103
25
50
75
100
125
o
150
T , Ambient TEMPERATURE ( C)
A
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current vs
Ambient Temperature
100
100
VGS = 10V
10
100us
1ms
SINGLE PULSE
= 135°C/W
10
R
1
0.1
θJA
10ms
T
= 25°C
A
LIMITED BY
PACKAGE
100ms
1s
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
T
J
= MAX RATED
SINGLE PULSE
10s
DC
o
T
= 25 C
A
1
0.01
0.7
10-4
10-3
10-2
t, PULSE WIDTH (s)
10-1
100
101
102
103
300
100
0.01
0.1
1
10
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
FDS8949 Rev. B1
4
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FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
