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FDS8949 参数 Datasheet PDF下载

FDS8949图片预览
型号: FDS8949
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道逻辑电平的PowerTrench MOSFET [Dual N-Channel Logic Level PowerTrench MOSFET]
分类和应用:
文件页数/大小: 6 页 / 352 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
 浏览型号FDS8949的Datasheet PDF文件第1页浏览型号FDS8949的Datasheet PDF文件第2页浏览型号FDS8949的Datasheet PDF文件第4页浏览型号FDS8949的Datasheet PDF文件第5页浏览型号FDS8949的Datasheet PDF文件第6页  
Typical Characteristics TJ = 25°C unless otherwise noted  
20  
16  
12  
8
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
PULSE DURATION = 300µs  
DUTY CYCLE = 20%MAX  
V
= 10V  
GS  
V
= 3.5V  
GS  
VGS = 3.0V  
V
= 4.5V  
GS  
VGS = 3.5V  
V
= 3.0V  
GS  
VGS = 4.5V  
VGS = 10V  
4
PULSE DURATION = 300µs  
DUTY CYCLE = 20%MAX  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
0
4
8
12  
16  
20  
ID, DRAIN CURRENT(A)  
VDS, DRAIN TO SOURCE VOLTAGE (V)  
Figure 1. On Region Characteristics  
Figure 2. Normalized On-Resistance vs Drain  
Current and Gate Voltage  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
70  
PULSE DURATION = 300µs  
DUTY CYCLE = 20%MAX  
I
= 6A  
D
I
D
= 3.5A  
V
= 10V  
GS  
60  
50  
40  
30  
20  
10  
T = 125oC  
J
T
J
= 25oC  
-50 -25  
0
25  
50  
75  
100 125 150  
2
4
6
8
10  
TJ, JUNCTION TEMPERATURE (oC)  
VGS, GATE TO SOURCE VOLTAGE (V)  
Figure 3. Normalized On Resistance vs Junction  
Temperature  
Figure 4. On-Resistance vs Gate to Source  
Voltage  
20  
100  
PULSE DURATION = 300µs  
DUTY CYCLE = 20%MAX  
V
GS  
= 0V  
V
= 10V  
16  
12  
8
DD  
10  
1
T = 125oC  
J
T
J
= 25oC  
T = 125oC  
J
T
J
= 25oC  
0.1  
= -55oC  
T
= -55oC  
J
T
J
4
0.01  
0
1.5  
1E-3  
2.0  
2.5  
3.0  
3.5  
4.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
VGS, GATE TO SOURCE VOLTAGE (V)  
V , BODY DIODE FORWARD VOLTAGE (V)  
SD  
Figure 5. Transfer Characteristics  
Figure 6. Source to Drain Diode Forward  
Voltage vs Source Current  
FDS8949 Rev. B1  
3
www.fairchildsemi.com  
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