FDS8880 N-Channel PowerTrench
®
MOSFET
Switching Characteristics
(V
GS
= 10V)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V
DD
= 15V, I
D
= 11.6A
V
GS
= 10V, R
GS
= 11Ω
-
-
-
-
-
-
-
7
27
38
15
-
51
-
-
-
-
80
ns
ns
ns
ns
ns
ns
Drain-Source Diode Characteristics
V
SD
t
rr
Q
RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 11.6A
I
SD
= 2.1A
I
SD
= 11.6A, dI
SD
/dt = 100A/µs
I
SD
= 11.6A, dI
SD
/dt = 100A/µs
-
-
-
-
-
-
-
-
1.25
1.0
30
20
V
V
ns
nC
Notes:
1:
Starting T
J
= 25°C, L = 1mH, I
AS
= 12.8A, V
DD
= 30V, V
GS
= 10V.
2:
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θJC
is guaranteed by design while R
θJA
is determined by the user’s board design.
a) 50°C/W when mounted on a 1in
2
pad of 2 oz copper.
b) 125°C/W when mounted on a minimum pad.
©2007 Fairchild Semiconductor Corporation
FDS8880 Rev. B
3
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
