FDS8880 N-Channel PowerTrench
®
MOSFET
April 2007
FDS8880
N-Channel PowerTrench
®
MOSFET
30V, 11.6A, 10mΩ
Features
r
DS(on)
= 10mΩ, V
GS
= 10V, I
D
= 11.6A
r
DS(on)
= 12mΩ, V
GS
= 4.5V, I
D
= 10.7A
High performance trench technology for extremely low
r
DS(on)
Low gate charge
High power and current handling capability
RoHS Compliant
tm
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(on)
and fast switching speed.
Applications
DC/DC converters
Branding Dash
5
5
4
3
2
1
6
7
1
2
3
4
8
SO-8
©2007 Fairchild Semiconductor Corporation
FDS8880 Rev. B
1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
