FDS8880 N-Channel PowerTrench
®
MOSFET
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
θJA
= 50
o
C/W)
Continuous (T
A
= 25 C, V
GS
= 4.5V, R
θJA
= 50 C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 C
Operating and Storage Temperature
o
o
o
Parameter
Ratings
30
±20
11.6
10.7
83
82
2.5
20
-55 to 150
Units
V
V
A
A
A
mJ
W
mW/
o
C
o
C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction to Case (Note 2)
Thermal Resistance, Junction to Ambient (Note 2a)
Thermal Resistance, Junction to Ambient (Note 2b)
25
50
125
o
C/W
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FDS8880
Device
FDS8880
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250µA, V
GS
= 0V
V
DS
= 24V
V
GS
= 0V
V
GS
= ±20V
T
J
=
150
o
C
30
-
-
-
-
-
-
-
-
1
250
±100
V
µA
nA
On Characteristics
V
GS(TH)
r
DS(on)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250µA
I
D
= 11.6A, V
GS
= 10V
Drain to Source On Resistance
I
D
= 10.7A, V
GS
= 4.5V
I
D
= 11.6A, V
GS
= 10V,
T
J
= 150
o
C
1.2
-
-
-
-
7.9
9.6
12.5
2.5
10.0
12.0
16.3
mΩ
V
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
V
GS
= 0.5V, f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V
I
D
= 11.6A
I
g
= 1.0mA
-
-
-
0.6
-
-
-
-
-
-
1235
260
150
2.5
23
12
1.3
3.3
2.0
4.2
-
-
-
4.3
30
16
1.6
-
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
nC
nC
©2007 Fairchild Semiconductor Corporation
FDS8880 Rev. B
2
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
