FDS6982S
Typical Characteristics: Q2
50
6.0V
4.5V
5.0V
30
3.5V
20
4.0V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
40
2.5
2
V
GS
= 3.0V
1.5
3.5V
4.0V
4.5V
6.0V
10V
1
10
3.0V
0
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0.5
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.04
R
DS(ON)
, ON-RESISTANCE (OHM)
2
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100
o
I
D
= 11.5A
V
GS
= 10V
I
D
= 11.5 A
0.035
0.03
0.025
T
A
= 125
o
C
0.02
0.015
T
A
= 25 C
o
125
150
0.01
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
50
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
40
T
A
= -55
o
C
25
o
C
100
o
30
I
S
, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
V
GS
= 0V
1
T
A
= 100
o
C
25
o
C
-55 C
o
20
0.1
10
0
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.01
0
0.2
0.4
0.6
0.8
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6982S Rev B (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
