FDS6982S
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage, Forward
Test Conditions
V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, I
D
= 250 uA
I
D
= 1 mA, Referenced to 25°C
I
D
= 250 µA, Referenced to 25°C
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
Type Min Typ Max Units
Q2
Q1
Q2
Q1
Q2
Q1
All
All
30
30
20
26
1000
1
100
-100
V
mV/°C
µA
nA
nA
Off Characteristics
Gate-Body Leakage, Reverse V
GS
= -20 V, V
DS
= 0 V
(Note 2)
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
I
D
= 1 mA, Referenced to 25°C
I
D
= 250 µA, Referenced to 25°C
V
GS
= 10 V, I
D
= 8.6 A
V
GS
= 10 V, I
D
= 8.6 A, T
J
= 125°C
V
GS
= 4.5 V, I
D
= 7.5 A
V
GS
= 10 V, I
D
= 6.3 A
V
GS
= 10 V, I
D
= 6.3 A, T
J
= 125°C
V
GS
= 4.5 V, I
D
= 5.6 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 8.6 A
V
DS
= 5 V, I
D
= 6.3 A
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
Q2
Q1
Q2
Q1
Q2
1
1
-3.5
-5
0.013
0.020
0.017
0.021
0.038
0.028
30
20
38
18
2040
815
615
186
216
66
3
3
V
mV/°C
Q1
0.016
0.027
0.021
0.028
0.047
0.035
Ω
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
pF
pF
pF
FDS6982S Rev B (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
