FDS6982S
Typical Characteristics Q1
10
I
D
= 6.3A
8
15V
V
DS
= 5V
10V
1200
1000
800
f = 1MHz
V
GS
= 0 V
6
600
4
400
2
200
0
0
4
8
Q
g
, GATE CHARGE (nC)
12
16
0
5
10
15
C
ISS
C
OSS
C
RSS
0
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 17. Gate Charge Characteristics.
100
R
DS(ON)
LIMIT
10
10ms
100ms
1s
10s
DC
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 135 C/W
T
A
= 25 C
0.01
0.1
1
10
100
0
o
o
Figure 18. Capacitance Characteristics.
30
SINGLE PULSE
100
µ
s
1ms
25
20
15
10
5
R
θ
JA
= 135 C/W
TA = 25 C
o
o
1
0.1
0.01
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
1
r(t) , NO RMALIZED EFFECTIVE
TRAN SIEN T T HERMAL RESISTANCE
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 135°C/W
t
1
t
2
T
J
- T
A
= P * R
θ
JA (t)
Duty Cycle, D = t
1
/t
2
0.001
0.01
0.1
t
1
, TIME (s ec)
1
10
100
300
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6982S Rev B (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
