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FDS6982S62Z 参数 Datasheet PDF下载

FDS6982S62Z图片预览
型号: FDS6982S62Z
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Field-Effect Transistor, 6.3A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8]
分类和应用: 开关脉冲光电二极管晶体管
文件页数/大小: 9 页 / 133 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDS6982
Typical Characteristics: Q1
(continued)
10
I
D
= 6.3A
8
15V
V
DS
= 5V
10V
1200
1000
800
f = 1MHz
V
GS
= 0 V
6
600
4
400
2
200
0
0
4
8
Q
g
, GATE CHARGE (nC)
12
16
0
5
10
15
C
ISS
C
OSS
C
RSS
0
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 17. Gate-Charge Characteristics.
Figure 18. Capacitance Characteristics.
100
R
DS(ON)
LIMIT
10
10ms
100ms
1s
10s
DC
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 135 C/W
T
A
= 25 C
0.01
0.1
1
10
100
o
o
30
SINGLE PULSE
100
µ
s
1ms
25
20
15
10
5
0
0.01
0.1
1
10
100
1000
R
θ
JA
= 135 C/W
TA = 25 C
o
o
1
0.1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
FDS6982, Rev. D1