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FDS6982S62Z 参数 Datasheet PDF下载

FDS6982S62Z图片预览
型号: FDS6982S62Z
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Field-Effect Transistor, 6.3A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8]
分类和应用: 开关脉冲光电二极管晶体管
文件页数/大小: 9 页 / 133 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDS6982
Typical Characteristics: Q2
50
V
GS
= 10V
40
5.0V
4.5V
2
1.8
1.6
1.4
V
GS
= 4.0V
4.5V
5.0V
1.2
6.0V
7.0V
1
10V
30
4.0V
20
3.5V
10
3.0V
0
1
2
3
4
0
0.8
0
10
20
30
40
50
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
1.6
I
D
= 8.6A
V
GS
= 10V
0.04
I
D
= 4.5A
0.03
1.4
1.2
0.02
T
A
= 125 C
o
1
0.01
T
A
= 25 C
o
0.8
0.6
-50
-25
0
25
50
75
100
o
0
125
150
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE ( C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
50
V
DS
= 5V
40
100
T
A
= -55 C
o
25 C
125 C
o
o
V
GS
= 0V
10
T
A
= 125 C
1
o
30
0.1
25 C
-55 C
o
o
20
0.01
0.001
0.0001
10
0
1
2
3
4
5
6
0
0.4
0.8
1.2
1.6
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS6982, Rev. D1