FDS6982
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
Q2
Q1
Q2
Q1
All
All
All
30
30
27
26
1
100
-100
V
mV/°C
µA
nA
nA
Zero Gate Voltage Drain
V
DS
= 24 V, V
GS
= 0 V
Current
Gate-Body Leakage, Forward V
GS
= 20 V, V
DS
= 0 V
Gate-Body Leakage, Reverse V
GS
= -20 V, V
DS
= 0 V
(Note 2)
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 10 V, I
D
= 8.6 A
V
GS
= 10 V, I
D
= 8.6 A, T
J
= 125°C
V
GS
= 4.5 V, I
D
= 7.5 A
V
GS
= 10 V, I
D
= 6.3 A
V
GS
= 10 V, I
D
= 6.3 A, T
J
= 125°C
V
GS
= 4.5 V, I
D
= 5.6 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 8.6 A
V
DS
= 5 V, I
D
= 6.3 A
Q2
Q1
Q2
Q1
Q2
1
1
2.2
1.6
-5
-4
0.012
0.018
0.016
0.021
0.038
0.028
3
3
V
mV/°C
Q1
0.015
0.024
0.020
0.028
0.047
0.035
Ω
Ω
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
Q2
Q1
Q2
Q1
30
20
50
40
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
Q2
Q1
Q2
Q1
Q2
Q1
2085
760
420
160
160
70
pF
pF
pF
FDS6982, Rev. D1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
