FDS6912
Typical Characteristics (continued)
10
I
D
= 6.3A
8
15V
6
V
DS
= 5V
10V
2000
CAPACITANCE (pF)
1000
500
C iss
4
C oss
200
80
2
f = 1 MHz
V
GS
= 0V
0.1
0.3
1
3
10
C rss
30
0
0
4
8
Q
g
, GATE CHARGE (nC)
12
16
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
IT
LIM
N)
S(O
RD
Figure 8. Capacitance Characteristics.
30
20
I
D
, DRAIN CURRENT (A)
10
1m
s
10m
s
100
us
25
20
POWER (W)
SINGLE PULSE
R
θJA
= 135°C/W
T
A
= 25°
2
0.5
100
1s
V
GS
= 10V
SINGLE PULSE
R
θJA
= 135 °C/W
T
A
= 25°C
0.2
0.5
V
ms
15
10
s
DC
10
0.05
5
0.01
0.1
DS
1
2
5
10
, DRAIN-SOURCE VOLTAGE (V)
20
0
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 135°C/W
t
1
t
2
T
J
- T
A
= P * R
θ
JA (t)
Duty Cycle, D = t
1
/t
2
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6912 Rev E (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
