Typical Characteristics
60
2
1.8
1.6
1.4
1.2
1
VGS = 10V
6V
5V
4.5V
50
VGS = 4.0V
40
4V
4.5V
30
5.0V
20
6.0V
7.0V
40
10V
10
3.5V
0
0.8
0
1
2
3
4
0
10
20
30
50
60
V
DS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.05
2
ID = 10A
ID = 10A
VGS = 10V
1.8
1.6
1.4
1.2
1
0.04
0.03
0.02
0.01
0
TA = 125oC
TA = 25oC
0.8
0.6
0.4
3
4
5
6
7
8
9
10
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
10
60
50
40
30
20
10
0
VGS=0
TA = -55oC
25oC
125oC
VDS =5V
1
TJ=125oC
0.1
25oC
-55oC
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1
2
3
4
5
VSD, BODY DIODE VOLTAGE (V)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS5670 Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
