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FDS3672_NL 参数 Datasheet PDF下载

FDS3672_NL图片预览
型号: FDS3672_NL
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Field-Effect Transistor, 7.5A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8]
分类和应用: 开关光电二极管晶体管
文件页数/大小: 11 页 / 196 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDS3672
Typical Characteristics
T
A
= 25°C unless otherwise noted
300
100
I
AS
, AVALANCHE CURRENT (A)
I
D
, DRAIN CURRENT (A)
10µs
30
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
100µs
10
10
1
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
10ms
100ms
STARTING T
J
= 25
o
C
0.1
1s
1
300
0.01
STARTING T
J
= 150
o
C
0.01
0.1
1.0
10.0
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
100
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
30
V
GS
= 10V
V
GS
= 6V
V
GS
= 5V
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
20
T
J
=
150
o
C
20
10
T
J
= 25
o
C
10
T
A
= 25
o
C
V
GS
= 4.5V
T
J
= -55
o
C
0
2.5
3.0
3.5
4.0
4.5
5.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
5.5
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2.0
Figure 7. Transfer Characteristics
24
DRAIN TO SOURCE ON RESISTANCE (m
Ω)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 6V
22
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
Figure 8. Saturation Characteristics
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.5
20
V
GS
= 10V
1.0
V
GS
= 10V, I
D
= 7.5A
18
0
2
4
I
D
, DRAIN CURRENT (A)
6
8
0.5
-80
-40
0
40
80
120
T
J
, JUNCTION TEMPERATURE (
o
C)
160
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2003 Fairchild Semiconductor Corporation
FDS3672 Rev. B