FDN358P
Typical Characteristics
5
V
GS
=-10V
-6.0V
-4.5V
R
DS(ON)
NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
2.2
2.0
V
GS
=-4.0V
1.8
1.6
1.4
1.2
1.0
0.8
0
1
2
3
4
5
-I
D
, DRAIN CURRENT (A)
4
-I
D
, DRAIN CURRENT (A)
-3.5V
3
-4.5V
-5.0V
-6.0V
-7.0V
-10V
2
-3.0V
1
0
0
0.5
1
1.5
2
2.5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
1.6
R
DS(ON)
NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
I
D
= -1.5A
V
GS
= -10V
1.4
I
D
= -0.75A
R
DS(ON)
ON-RESISTANCE (OHM)
,
0.3
1.2
T
A
= 125
o
C
0.2
T
A
= 25
o
C
0.1
1
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
0
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
5
25
o
C
125
o
C
3
-I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= -5V
4
-I
D
, DRAIN CURRENT (A)
T
A
=
-55
o
C
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
V
GS
= 0V
1
T
A
= 125
o
C
0.1
25
o
C
0.01
-55
o
C
2
1
0.001
0
1.5
2
2.5
3
3.5
4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN358P Rev E1 (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
