FDN358P
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= –250
µA
I
D
= –250
µA,
Referenced to 25°C
V
DS
= –24V,
V
GS
= 25 V,
V
GS
= 0 V
V
DS
= 0 V
Min
–30
Typ
Max Units
V
Off Characteristics
–22
–1
–10
100
–100
nA
nA
mV/°C
µA
V
DS
= –24V, V
GS
= 0 V, T
J
=55°C
V
GS
= –25 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= –250
µA
I
D
= –250
µA,
Referenced to 25°C
V
GS
= –10 V,
I
D
= –1.5 A
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
–1
–1.9
4
105
148
161
–3
V
mV/°C
125
210
200
mΩ
V
GS
= –10 V, I
D
= –1.5 A,T
J
=125°C
V
GS
= –4.5 V,
I
D
= –1.2A,
V
GS
= –4.5 V,
V
DS
= –5 V,
V
DS
= –5 V
I
D
= –1.5 A
–5
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
A
3.5
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= –15 V,
f = 1.0 MHz
V
GS
= 0 V,
182
56
26
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –15 V,
V
GS
= –10 V,
I
D
= –0.5 A,
R
GEN
= 6
Ω
5
13
12
2
10
23
21
4
2.8
ns
ns
ns
ns
nC
nC
nC
V
DS
= –15V,
V
GS
= –10 V
I
D
= –1.5 A,
4
0.8
0.8
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 250°C/W when mounted on a
0.02 in
2
pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= –0.42 A
Voltage
–0.42
(Note 2)
A
V
–0.76
–1.2
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FDN358P Rev E1 (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
