FDN358P
October 2001
FDN358P
Single P-Channel, Logic Level, PowerTrench
®
MOSFET
General Description
This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor advanced Power Trench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior sw itching performance.
These devices are well suited for portable electronics
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
Features
•
–1.5 A, –30 V. R
DS(ON)
= 125 mΩ @ V
GS
= –10 V
R
DS(ON)
= 200 mΩ @ V
GS
= –4.5 V
•
Low gate charge (4 nC typical)
•
High performance trench technology for extremely
low R
DS(ON)
.
•
High power version of industry Standard SOT-23
package. Identical pin-out to SOT-23 with 30%
higher power handling capability.
D
D
S
G
S
SuperSOT -3
TM
G
T
A
=25 C unless otherwise noted
o
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Parameter
Ratings
–30
±25
(Note 1a)
Units
V
V
A
–1.5
–5
0.5
0.46
–55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
W
°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJ
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
358
Device
FDN358P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
©2001
Fairchild Semiconductor Corporation
FDN358P Rev E1 (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
