FDN339AN
Typical Characteristics
5
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 3A
4
V
DS
= 5V
(continued)
1000
10V
800
CAPACITANCE (pF)
15V
C
ISS
600
f = 1MHz
V
GS
= 0 V
3
2
400
1
200
C
OSS
C
RSS
0
0
2
4
6
8
10
Q
g
, GATE CHARGE (nC)
0
0
4
8
12
16
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
R
DS(ON)
LIMIT
I
D
, DRAIN CURRENT (A)
10
POWER (W)
10ms
100ms
1
10s
V
GS
= 4.5V
SINGLE PULSE
o
R
θJA
= 270 C/W
TA = 25 C
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
o
20
SINGLE PULSE
1ms
16
R
θ
JA
=270 C/W
T
A
=25 C
12
o
o
1s
DC
8
0.1
4
0
0.0001
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 270 °C/W
t
1
t
2
T
J
- T
A
= P * R
θ
JA (t)
Duty Cycle, D = t
1
/t
2
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
300
0.001
0.0001
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
FDN339AN Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
