FDN339AN
Typical Characteristics
20
V
GS
= 4.5V
I
D
, DRAIN CURRENT (A)
16
3.0V
2.5V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2
1.8
1.6
1.4
1.2
1
0.8
2.5V
3.0V
3.5V
4.0V
V
GS
= 2.0V
12
2.0V
8
4
1.5V
0
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4.5V
0
4
8
12
16
20
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.1
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 3A
V
GS
= 4.5V
1.4
I
D
= 1.5A
0.08
1.2
0.06
T
A
= 125
o
C
T
A
= 25
o
C
0.02
1
0.04
0.8
0.6
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (
o
C)
Figure 3. On-Resistance Variation
with Temperature.
20
125
o
C
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
16
T
A
= -55 C
o
25 C
o
V
GS
= 0V
10
1
0.1
0.01
0.001
0.0001
12
T
A
= 125
o
C
25 C
-55 C
o
o
8
4
0
0.5
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDN339AN Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
