FDN339AN
November 1999
FDN339AN
N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
Features
•
3 A, 20 V. R
DS(ON)
= 0.035
Ω
@ V
GS
= 4.5 V
R
DS(ON)
= 0.050
Ω
@ V
GS
= 2.5 V.
•
•
•
Low gate charge (7nC typical).
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
Applications
•
DC/DC converter
•
Load switch
D
D
S
SuperSOT -3
TM
G
T
A
= 25°C unless otherwise noted
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
stg
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
Parameter
Ratings
20
±8
(Note 1a)
Units
V
V
A
W
°C
3
20
0.5
0.46
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
Package Outlines and Ordering Information
Device Marking
339
Device
FDN339AN
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
1999
Fairchild Semiconductor Corporation
FDN339AN Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
