Typical Electrical Characteristics
5
-V
GS
, GATE-SOURCE VOLTAGE (V)
1000
I
D
= -1.6A
4
V
DS
= -5V
-15V
CAPACITANCE (pF)
600
400
200
100
50
C
iss
3
Coss
2
1
20
0.1
f = 1 MHz
V
GS
= 0 V
0.2
0.5
1
2
5
C
rss
0
0
2
4
Q
g
, GATE CHARGE (nC)
6
8
10
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
10
5
-I
D
, DRAIN CURRENT (A)
2
1
0.5
RD
O
S(
N)
LIM
IT
50
1m
10
s
ms
POWER (W)
40
10
0m
s
SINGLE PULSE
R
θ
JA
=250° C/W
T
A
= 25°C
1s
10s
30
0.1
0.05
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
=250°C/W
T
A
= 25°C
A
0.2
0.5
-V
DS
DC
20
10
0.01
0.1
1
2
5
10
20
40
0
0.0001
0.001
0.01
0.1
1
10
100 300
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 250 °C/W
t
1
t
2
T
J
- T
A
= P * R
θ
JA (t)
Duty Cycle, D = t
1
/t
2
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
300
Figure 11. Transient Thermal Response Curve.
FDN338P Rev.D
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
