Typical Electrical Characteristics
10
-I
D
, DRAIN-SOURCE CURRENT (A)
2
R
DS(ON)
, NORMALIZED
8
V
GS
= -4.5V
-4.0
-3.5
-3.0
-2.5
DRAIN-SOURCE ON-RESISTANCE
1.8
1.6
1.4
1.2
1
0.8
V
GS
= -2.0V
6
-2.5
-3.0
-3.5
-4.0
-4.5
-2.0
4
2
-1.5
0
0
1
2
3
4
5
0
2
4
6
8
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
DRAIN-SOURCE ON-RESISTANCE
0.5
I
D
= -1.6A
1.4
V
GS
= -4.5V
R
DS(ON)
,ON-RESISTANCE(OHM)
I
D
= -0.8A
0.4
R
DS(ON)
, NORMALIZED
1.2
0.3
T
J
= 125°C
0.2
1
0.8
0.1
25°C
0.6
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
-V
GS
,GATE TO SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
-I
S
, REVERSE DRAIN CURRENT (A)
10
10
V
DS
= -5V
-I
D
, DRAIN CURRENT (A)
8
T
A
= -55°C
V
GS
= 0V
1
25°C
125°C
6
0.1
T = 125°C
J
25°C
-55°C
4
0.01
2
0.001
0
0.0001
0
1
2
3
4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDN338P Rev.D
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
