FDN338P
Typical Characteristics
5
I
D
= -1.6A
-V
GS
, GATE-SOURCE VOLTAGE (V)
4
-15V
V
DS
= -5V
-10V
600
f = 1MHz
V
G S
= 0 V
C
ISS
400
500
3
300
2
200
1
C
O S S
100
C
R S S
0
0
1
2
3
4
5
Q
g
, GATE CHARGE (nC)
0
0
2
4
6
8
10
12
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
10
P(pk), PEAK TRANSIENT POWER (W)
R
DS(ON)
LIMIT
10ms
-I
D
, DRAIN CURRENT (A)
100ms
1
1s
10s
DC
0.1
V
GS
=-4.5V
SINGLE PULSE
R
θ
JA
= 270
o
C/W
T
A
= 25
o
C
0.01
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
1ms
20
Figure 8. Capacitance Characteristics.
SINGLE PULSE
R
θ
JA
= 270°C/W
T
A
= 25°C
15
10
5
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
R
θJA
(t) = r(t) + R
θJA
R
θ
JA
= 270 °C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN338P Rev F(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
