FDN338P
September 2001
FDN338P
P-Channel 2.5V Specified PowerTrench
®
MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Features
•
–1.6 A, –20 V. R
DS(ON)
= 115 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 155 mΩ @ V
GS
= –2.5 V
•
Fast switching speed
•
High performance trench technology for extremely
low R
DS(ON)
•
SuperSOT
T M
-3 provides low R
DS(ON)
and 30% higher
power handling capability than SOT23 in the same
footprint
Applications
•
•
•
Battery management
Load switch
Battery protection
D
D
S
G
S
SuperSOT -3
TM
G
T
A
=25
o
C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
Parameter
Ratings
–20
±8
–1.6
–5
(Note 1a)
(Note 1b)
Units
V
V
A
W
°C
0.5
0.46
–55 to +150
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJ
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
.338
Device
FDN338P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
©2001
Fairchild Semiconductor Corporation
FDN338P Rev F(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
