FDN338P
Typical Characteristics
5
V
GS
= -4.5V
-3.5V
4
-I
D
, DRAIN CURRENT (A)
-2.5V
-2.0V
R
DS(ON)
NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
2
V
GS
= -2.0V
1.8
1.6
1.4
1.2
1
0.8
0
0.5
1
1.5
2
0
1
2
3
4
5
-I
D
, DRAIN CURRENT (A)
2.2
3
2
-2.5V
-3.0V
-3.5V
-4.5V
1
0
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.34
I
D
= -0.8 A
R
DS(ON)
ON-RESISTANCE (OHM)
,
1.8
R
DS(ON)
NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
I
D
= -1.6A
V
GS
= -4.5V
1.6
1.4
0.3
0.26
0.22
0.18
T
A
= 125
o
C
0.14
0.1
T
A
= 25
o
C
0.06
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
(
o
C)
125
150
T
J
, JUNCTION TEMPERATURE
Figure 3. On-Resistance Variation with
Temperature.
5
V
DS
= - 5V
4
-I
D
, DRAIN CURRENT (A)
T
A
= -55
o
C
125
o
C
25
o
C
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
V
GS
= 0V
1
T
A
= 125
o
C
0.1
25
o
C
0.01
-55
o
C
3
2
1
0.001
0
0.5
0.75
1
1.25
1.5
1.75
2
2.25
-V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN338P Rev F(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
